DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGM1012
MMIC wideband amplifier
Product specification
2002 Sep 06
Supersedes data of 2002 May 16
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
UNIT
RF input AC coupled
−
−
−
4
V
IS
supply current
50
mA
mW
°C
°C
dBm
Ptot
Tstg
Tj
total power dissipation
storage temperature
operating junction temperature
maximum drive power
Ts ≤ 90 °C
200
+150
150
10
−65
−
PD
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to
solder point
Ptot = 200 mW; Ts ≤ 90 °C
300
2002 Sep 06
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
CHARACTERISTICS
VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
PARAMETER
supply current
CONDITIONS
MIN.
11
TYP.
14.6
MAX.
19
UNIT
mA
2
s21
insertion power gain
f = 100 MHz
f = 1 GHz
19
19
19
19
18
16
9
19.5
20.1
20.4
20.4
19.9
18.7
11
20
21
21
22
21
20
−
−
−
−
−
dB
dB
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
dB
dB
dB
dB
RL IN
return losses input
return losses output
isolation
f = 1 GHz
dB
f = 2.2 GHz
f = 1 GHz
13
11
10
30
35
−
15
dB
RL OUT
14
dB
f = 2.2 GHz
f = 1 GHz
13
dB
2
s12
33
dB
f = 2.2 GHz
f = 1 GHz
38
−
dB
NF
noise figure
4.8
4.9
3.6
2.1
3.4
9.7
5.6
6.0
3.4
−2
5.1
5.3
−
−
−
−
−
−
−
−
−
−
−
dB
f = 2.2 GHz
at s21 2 −3 dB below flat gain at 1 GHz 3.1
−
dB
BW
K
bandwidth
GHz
−
−
stability factor
f = 1 GHz
1.5
3
f = 2.2 GHz
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
saturated load power f = 1 GHz
f = 2.2 GHz
8
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
3.5
4
load power
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
1.5
−4
−9
16
11
input intercept point
f = 1 GHz
f = 2.2 GHz
−7
18
output intercept point f = 1 GHz
f = 2.2 GHz
13
2002 Sep 06
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
APPLICATION INFORMATION
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 Ω, and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be
increased.
DC-block
DC-block
100 pF
DC-block
100 pF
handbook, halfpage
100 pF
input
output
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
MGU437
Fig.3 Easy cascading application circuit.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
mixer
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
wideband
amplifier
MGU438
oscillator
Fig.4 Application as IF amplifier.
V
handbook, halfpage
s
C1
L1
V
s
RF in
RF out
RF input
RF output
mixer
handbook, halfpage
antenna
C2
C3
to IF circuit
or demodulator
MGU436
GND1
GND2
LNA
wideband
amplifier
MGU439
oscillator
Fig.2 Typical application circuit.
Fig.5 Application as RF amplifier.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
mixer
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
wideband
amplifier
MGU440
oscillator
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
Fig.6 Application as driver amplifier.
2002 Sep 06
5
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
45°
+2
+0.5
+0.2
+5
100 MHz
4 GHz
0.2
0.5
2
5
180°
0
0°
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD910
1.0
−90°
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.7 Input reflection coefficient (s11); typical values.
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
45°
+2
+0.5
+0.2
+5
100 MHz
2
0.2
0.5
1
5
180°
0
0°
4 GHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD911
1.0
−90°
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.8 Output reflection coefficient (s22); typical values.
6
2002 Sep 06
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
MLD912
MLD913
0
25
handbook, halfpage
handbook, halfpage
2
s
12
(dB)
2
s
21
−10
(dB)
20
(1)
−20
(2)
(3)
−30
15
−40
10
0
−50
0
1000
2000
3000
4000
1000
2000
3000
4000
f (MHz)
f (MHz)
PD = −30 dBm; ZO = 50 Ω.
(1) IS = 18.7 mA; VS = 3.3 V.
(2) IS = 14.6 mA; VS = 3 V.
(3) IS = 10.6 mA; VS = 2.7 V.
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.9 Isolation ( s12 2) as a function of frequency;
typical values.
Fig.10 Insertion gain ( s21 2) as a function of
frequency; typical values.
MLD914
MLD915
20
20
handbook, halfpage
handbook, halfpage
P
L
P
L
(dBm)
(dBm)
10
10
(1)
(1)
(2)
(3)
(3)
(2)
0
−10
−20
0
−10
−20
−40
−30
−20
−10
0
−40
−30
−20
−10
0
P
(dBm)
P
(dBm)
D
D
f = 1 GHz; ZO = 50 Ω.
(1) VS = 3.3 V.
(2) VS = 3 V.
f = 2.2 GHz; ZO = 50 Ω.
(1) VS = 3.3 V.
(2) VS = 3 V.
(3) VS = 2.7 V.
(3) VS = 2.7 V.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Sep 06
7
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
MLD916
MLD917
5.5
12
handbook, halfpage
handbook, halfpage
NF
(dB)
K
8
5.3
5.1
4.9
(1)
(2)
(3)
4
4.7
4.5
0
0
0
1000
2000
3000
1000
2000
3000
4000
f (MHz)
f (MHz)
ZO = 50 Ω.
(1) IS = 10.6 mA; VS = 2.7 V.
(2) S = 14.6 mA; VS = 3 V.
(3) IS = 18.7 mA; VS = 3.3 V.
I
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.13 Noise figure as a function of frequency;
typical values.
Fig.14 Stability factor as a function of frequency;
typical values.
2002 Sep 06
8
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Scattering parameters
VS = 3 V; IS = 14.6 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C.
s11
s21
s12
MAGNITUDE
s22
MAGNITUDE
K-
FACTOR
f (MHz)
MAGNITUDE
ANGLE
(deg)
MAGNITUDE
ANGLE
(deg)
ANGLE
(deg)
ANGLE
(deg)
(ratio)
(ratio)
(ratio)
(ratio)
100
200
0.25122
0.27070
0.27979
0.28323
0.28557
0.28673
0.28517
0.27902
0.26682
0.24746
0.21894
0.18164
0.14000
0.10418
0.09469
0.10595
0.11609
0.10827
0.09866
0.08693
0.10090
14.607
2.759
9.33681
9.42458
9.63627
9.76543
9.93782
10.03633
10.11638
10.26450
10.40572
10.44088
10.46224
10.45202
10.34342
9.87989
9.20393
8.68177
8.18809
7.93039
7.77538
7.33775
6.90878
12.018
5.676
0.032124
0.028303
0.026297
0.024833
0.023234
0.021523
0.019830
0.018230
0.016902
0.015759
0.014310
0.013012
0.011826
0.010171
0.008664
0.007541
0.006655
0.006042
0.006205
0.007039
0.008241
16.445
6.37
0.26458
0.20645
0.1543
64.156
64.153
52.558
39.347
27.926
19.293
12.703
7.154
1.6
1.8
1.9
1.9
2.0
2.1
2.2
2.4
2.5
2.7
3.0
3.4
3.9
4.9
6.2
7.5
9.0
10.3
10.3
9.6
8.7
400
−7.969
−14.78
−20.13
−24.14
−27.57
−29.93
−31.81
−33.12
−33.8
−32.67
−26.75
−10.16
15.051
33.415
42.888
50.017
60.967
80.355
102.07
−8.447
−19.02
−27.93
−36.88
−46.47
−56.05
−65.76
−76.97
−88.33
−100.3
−112.6
−122.9
−129.5
−135.4
−142.2
−151.5
−162.2
−172.6
177.1
−4.545
−10.24
−14.62
−17.42
−19.83
−21.14
−21.62
−22.32
−22.64
−23.13
−23.27
−23.23
−16.9
−9.957
−0.835
12.444
29.297
40.351
46.053
600
0.15203
0.16867
0.19196
0.21421
0.23292
0.24605
0.25113
0.24367
0.22184
0.18787
0.13049
0.1294
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
2.582
−1.26
−4.817
−7.573
−8.489
−4.601
9.578
0.1127
18.402
23.406
26.453
38.211
−152.8
−133.1
0.092234
0.059268
0.015829
0.028159
0.075298
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M
B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2002 Sep 06
10
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 06
11
Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002
SCA74
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Printed in The Netherlands
613516/03/pp12
Date of release: 2002 Sep 06
Document order number: 9397 750 10021
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